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document number: 93587 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 power rectifier diodes (t-modules), 40 a to 110 a t40hf..., t70hf..., t85hf..., t110hf... series vishay semiconductors features ? electrically isolated base plate ? types up to 1200 v rrm ? 3500 v rms isolating voltage ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? ul e78996 approved ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description these series of t-modules use standard recovery power rectifier diodes. the semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. applications include power supplies, battery charges, welders, motor controls an d general indu strial current rectification. product summary i f(av) 40 a to 110 a type modules - diode, high voltage d-55 major ratings and characteristics symbol characteristics t40hf t70hf t85hf t110hf units i f(av) 40 70 85 110 a t c 85 85 85 85 c i f(rms) 63 110 134 173 a i fsm 50 hz 570 1200 1700 2000 a 60 hz 600 1250 1800 2100 i 2 t 50 hz 1630 7100 14 500 20 500 a 2 s 60 hz 1500 6450 13 500 18 600 i 2 t 16 300 70 700 148 700 204 300 a 2 s v rrm 100 to 1200 v t j - 40 to 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93587 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-may-10 t40hf..., t70hf..., t 85hf..., t110hf... series vishay semiconductors power rectifier diodes (t-modules), 40 a to 110 a electrical specifications voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 25 c a t40hf... t70hf... t85hf... t110hf... 10 100 150 100 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 forward conduction parameter symbol test conditio ns t40hf t70hf t85hf t110hf units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 40 70 85 110 a 85 85 85 85 c maximum rms forward current i f(rms) 63 110 134 173 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 570 1200 1700 2000 a t = 8.3 ms 600 1250 1800 2100 t = 10 ms 100 % v rrm reapplied 480 1000 1450 1700 t = 8.3 ms 500 1050 1500 1780 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1630 7100 14 500 20 500 a 2 s t = 8.3 ms 1500 6450 13 500 18 600 t = 10 ms 100 % v rrm reapplied 1150 5000 10 500 14 500 t = 8.3 ms 1050 4570 9600 13 200 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 16 300 70 700 148 700 204 300 a 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j maximum 0.66 0.76 0.68 0.68 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j maximum 0.84 0.95 0.90 0.86 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j maximum 4.3 2.4 1.76 1.56 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j maximum 3.1 1.7 1.08 1.12 maximum forward voltage drop v fm i fm = x i f(av) , t j = 25 c, t p = 400 s square pulse average power = v f(to) x i f(av) + r f x (i f(rms) ) 2 1.30 1.35 1.27 1.35 v
document number: 93587 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 t40hf..., t70hf..., t85hf..., t110hf... series power rectifier diodes (t-modules), 40 a to 110 a vishay semiconductors note (1) a mounting compound is recommended and the to rque should be rechecked after a period of about 3 hours to allow for the spread o f the compound note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc blocking parameter symbol test conditions t40hf t70hf t85hf t110hf units maximum peak reverse leakage current i rrm t j = 150 c 15 15 20 20 ma rms isolation voltage v isol 50 hz, circuit to base, all terminals shorted t j = 25 c, t = 1 s 3500 3500 3500 3500 v thermal and mechanical specifications parameter symbol test conditions values units t40hf t70hf t85hf t110hf maximum junction operating and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to ca se per junction r thjc dc operation 1.36 0.69 0.62 0.47 k/w maximum thermal resistance, case to heatsink r thcs mounting surface smooth, flat and greased 0.2 mounting torque, 10 % to heatsink non-lubricated threads m3.5 mounting screws (1) 1.3 10 % nm terminals m5 screw terminals 3 10 % approximate weight see dimensions - link at the end of datasheet 54 g case style t-module (d-55) r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 t40hf... 0.12 0.14 0.18 0.27 0.46 0.09 0.15 0.20 0.28 0.46 k/w t70hf... 0.09 0.11 0.14 0.20 0.35 0.07 0.11 0.15 0.21 0.35 t85hf... 0.08 0.09 0.12 0.18 0.31 0.06 0.10 0.13 0.19 0.31 t110hf... 0.05 0.07 0.09 0.14 0.23 0.05 0.08 0.10 0.15 0.24
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93587 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-may-10 t40hf..., t70hf..., t 85hf..., t110hf... series vishay semiconductors power rectifier diodes (t-modules), 40 a to 110 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics 60 70 80 90 100 110 120 130 140 150 01020304050 30 60 90 120 180 maximum allowable case temperature (c) conduction angle avera ge fo rwa rd c urrent (a ) t4 0 hf. . se r i e s r (dc) = 1.36 k/w thjc 60 70 80 90 100 110 120 130 140 150 0 10203040506070 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) t4 0 h f. . se r i e s r (dc) = 1.36 k/w thjc 0 255075100125150 maximum allowable ambient temperature (c) r = 0 . 5 k / w - d e lt a r ths a 1 k / w 1 . 5 k / w 2 k / w 3 k / w 5 k / w 7 k / w 1 0 k / w 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 average forward current (a) rm s li m i t maximum average forward power loss (w) conduc tion angle 180 120 90 60 30 t4 0 h f. . se r i e s t = 150c j 0255075100125150 maximum allowable ambient temperature (c) 1 0 k / w 5 k / w 2 k / w 1 . 5 k / w 1 k / w r = 0 . 5 k / w - d e l t a r t h s a 7 k / w 3 k / w 0 10 20 30 40 50 60 70 0 10203040506070 dc 180 120 90 60 30 rm s lim it conduc tion period average forward current (a) maximum average forward power loss (w) t40hf.. series t = 150c j
document number: 93587 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 t40hf..., t70hf..., t85hf..., t110hf... series power rectifier diodes (t-modules), 40 a to 110 a vishay semiconductors fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non- repetitive surge current fig. 7 - current ratings characteristics fig. 8 - current ratings characteristics fig. 9 - forward power loss characteristics 150 200 250 300 350 400 450 500 550 110100 peak ha lf sine wave forw ard current (a) number of equal amplitude half cycle current pulses (n) initia l t = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. j rrm t4 0 hf. . se r i e s 100 150 200 250 300 350 400 450 500 550 600 0.01 0.1 1 peak half sine wave forward current (a) pu lse tra in d ura t io n ( s) maximum non repetitive surge current t4 0 hf. . se r i e s initia l t = 150c no voltage reapplied ra t e d v re a p p l i e d rrm versus pulse train duration. j 60 70 80 90 100 110 120 130 140 150 0 1020304050607080 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) t7 0 h f. . se r i e s r (dc) = 0.69 k/ w thjc 60 70 80 90 100 110 120 130 140 150 020406080100120 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) t7 0 hf. . se r i e s r (dc) = 0.69 k/ w thjc 0 25 50 75 100 125 150 maximum allowable ambient temperature (c) r = 0 . 3 k / w - d e l t a r t h s a 0 . 5 k / w 0.7 k / w 1 k / w 1 . 5 k / w 2 k / w 3 k / w 5 k / w 7 k / w 0 10 20 30 40 50 60 70 80 90 0 10203040506070 average forward current (a) rm s li m i t maximum average forward power loss (w) conduc tion angle 180 120 90 60 30 t7 0 hf. . se r i e s t = 150c j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93587 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-may-10 t40hf..., t70hf..., t 85hf..., t110hf... series vishay semiconductors power rectifier diodes (t-modules), 40 a to 110 a fig. 10 - forward power loss characteristics fig. 11 - maximum non-re petitive surge current fig. 12 - maximum non-re petitive surge current fig. 13 - current ra tings characteristics fig. 14 - current ra tings characteristics 0255075100125150 maximum allowable ambient temperature (c) 0 . 5 k / w 0. 3 k /w 0 . 7 k / w 1 k/ w 1 . 5 k / w 5 k / w 3 k / w 2 k / w r = 0 . 2 k / w - d e l t a r t h s a 0 20 40 60 80 100 120 0 20406080100120 dc 180 120 90 60 30 rm s li m i t conduction period ave ra g e fo rw a rd current (a) maximum average forward power loss (w) t7 0 h f. . se r i e s t = 1 5 0 c j 300 400 500 600 700 800 900 1000 1100 110100 pe a k ha lf sine wa ve fo rw a rd c urrent ( a) number of equal amplitude half cycle current pulses (n) t7 0 h f. . s eries initial t = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any ra ted loa d co nd ition and with rated v app lied following surge. j rrm 200 300 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) maximum non repetitive surge current t7 0 h f. . se r i e s initial t = 150c no vo ltage rea p plied rated v rea p plied rrm versus pulse train duration. j 80 90 100 110 120 130 140 150 0 102030405060708090 30 60 90 120 180 maximum allowable case temperature (c) conduc tion angle average forward current (a) t8 5 h f. . se r i e s r (dc) = 0.62 k/w thjc 60 70 80 90 100 110 120 130 140 150 0 20 40 60 80 100 120 140 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) t8 5 hf. . se r i e s r (dc) = 0.62 k/ w thjc
document number: 93587 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 t40hf..., t70hf..., t85hf..., t110hf... series power rectifier diodes (t-modules), 40 a to 110 a vishay semiconductors fig. 15 - forward power loss characteristics fig. 16 - forward power loss characteristics fig. 17 - maximum non-repetitive surge current fig. 18 - maximum non-repetitive surge current 0 255075100125150 maximum allowable ambient temperature (c) r = 0 . 2 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 5 k / w 0 . 7 k / w 1 k / w 1 . 5 k / w 2 k / w 3 k / w 5 k / w 7 k / w 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090 average forward current (a) rm s lim i t maximum average forward power loss (w) conduc tion angle 180 120 90 60 30 t8 5 h f. . se r i e s t = 1 5 0 c j 0 25 50 75 100 125 150 maximum allowable ambient temperature (c) 0 . 5 k / w 0 . 3 k / w 0 . 7 k / w 1 k / w 1 . 5 k / w 2 k / w 3 k / w 5 k / w r = 0 . 2 k / w - d e l t a r t h s a 0 20 40 60 80 100 120 140 0 20406080100120140 dc 180 120 90 60 30 rm s lim it conduction period avera g e forwa rd current (a) maximum average forward power loss (w) t8 5 hf. . se r i e s t = 1 5 0 c j 400 600 800 1000 1200 1400 1600 110100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) t8 5 h f. . se r i e s initial t = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm 400 600 800 1000 1200 1400 1600 1800 0.01 0.1 1 peak half sine wave forward current (a) pu lse t ra in dura tion (s) maximum non repetitive surge current initial t = 150c no vo lta g e rea p p lied rated v reapplied j versus pulse train duration. rrm t8 5 hf. . se r i e s
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93587 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-may-10 t40hf..., t70hf..., t 85hf..., t110hf... series vishay semiconductors power rectifier diodes (t-modules), 40 a to 110 a fig. 19 - current ratings characteristics fig. 20 - current rati ngs characteristics fig. 21 - forward power loss characteristics fig. 22 - forward power loss characteristics 60 70 80 90 100 110 120 130 140 150 0 20406080100120 30 60 90 120 180 maximum allowa ble case temperature (c) conduc tion angle average forward current (a) t1 1 0 hf. . s eries r (dc) = 0.47 k/ w thjc 60 70 80 90 100 110 120 130 140 150 0 20 40 60 80 100 120 140 160 180 dc 30 60 90 120 180 maximum allowable case temperature (c) conduc tion period t1 1 0 h f. . se r i e s r ( d c ) = 0 . 47 k/ w thjc average forward current (a) 0255075100125150 maximum allowable ambient temperature (c) 5 k / w 3 k / w 2 k / w 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 2 k / w - d e l t a r t h s a 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20406080100120 average forward current (a) rm s lim it maximum avera ge forward power loss (w) conduc tion angle 180 120 90 60 30 t1 1 0 h f. . s eries t = 1 5 0 c j 0 25 50 75 100 125 150 maximum allowable ambient temperature (c) 5 k / w 3 k / w 2 k / w 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 2 k / w - d e l t a r t h s a 0 20 40 60 80 100 120 140 160 180 0 20406080100120140160180 dc 180 120 90 60 30 rm s li m i t conduc tion period average forward current (a) maximum average forward pow er loss (w) t1 1 0 h f. . s eries t = 150c j
document number: 93587 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 9 t40hf..., t70hf..., t85hf..., t110hf... series power rectifier diodes (t-modules), 40 a to 110 a vishay semiconductors fig. 23 - maximum non-re petitive surge current fig. 24 - maximum non-re petitive surge current fig. 25 - forward voltage drop characteristics fig. 26 - forward voltage drop characteristics fig. 27 - forward voltage drop characteristics fig. 28 - forward voltage drop characteristics 400 600 800 1000 1200 1400 1600 1800 110100 peak ha lf sine wave forw a rd current (a) numbe r of eq ua l amp lit ud e half cyc le current pulses (n) t1 1 0 h f. . se r i e s initia l t = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v app lied following surge. rrm j 400 600 800 1000 1200 1400 1600 1800 2000 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) maximum non repetitive surge current t1 1 0 h f. . se r i e s initial t = 150c no voltage reapplied ra t e d v re a p p l i e d versus pulse train dura t io n. rrm j 1 10 100 1000 00.511.522.533.54 t = 2 5 c j insta nt a neo us forwa rd current (a) instantaneous forward voltage (v) t = 1 5 0 c j t4 0 h f. . se r i e s 1 10 100 1000 00.511.522.53 t = 25c j instantaneous forward current (a) instantaneous forward voltage (v) t7 0 h f. . se r i e s t = 1 5 0 c j 10 100 1000 10000 012345 t = 2 5 c j in st a n t a n e o u s fo rw a rd c u r re n t ( a ) instantaneous forward voltage (v) t = 150c j t8 5 hf. . se r i e s 10 100 1000 10000 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t = 2 5 c j instantaneous forward current (a) instantaneous forward voltage (v) t = 1 5 0 c t1 1 0 h f. . se r i e s j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93587 10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-may-10 t40hf..., t70hf..., t 85hf..., t110hf... series vishay semiconductors power rectifier diodes (t-modules), 40 a to 110 a fig. 29 - thermal impedance z thjc characteristics ordering information table 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 sq ua re wa ve pulse duration (s) thjc transient thermal impedance z (k/w) st e a d y st a t e v a l u e : r = 1.36 k/ w r = 0.69 k/ w r = 0.62 k/ w r = 0.47 k/ w (dc operation) thjc thjc thjc thjc t4 0 h f. . se r i e s t7 0 h f. . s eries t8 5 hf. . se r i e s t1 1 0 h f. . se r i e s circuit configuration circuit description circuit configuration code circuit drawing single diode hf 1 - module type 3 - circuit configuration (see circuit configuration table) - voltage code x 10 = v rrm 4 - current rating 2 device code 13 24 t 110 hf 120 +- links to related documents dimensions www.vishay.com/doc?95313
document number: 95313 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-jul-08 1 d-55 t-module diode standard and fast recovery outline dimensions vishay semiconductors dimensions in millimeters (inches) 3 (0.12) 3.9 (0.15) 8 (0.31) m5 30 (1.18) 27 (1.06) 41 (1.61) max. 25 1 23.5 (0.93) + - 11 (0.43) 18 (0.71) 15 (0.59)
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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